IGP01N120H2

Manufacturer Part	IGP01N120H2
Manufacturer	Infineon Technologies
Description	POWER BIPOLAR TRANSISTOR NPN
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Active
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	3.2 A
Current - Collector Pulsed (Icm):	3.5 A
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 1A
Power - Max:	28 W
Switching Energy:	140µJ
Input Type:	Standard
Gate Charge:	8.6 nC
Td (on/off) @ 25°C:	13ns/370ns
Test Condition:	800V, 1A, 241Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	PG-TO220-3-1

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;