IRFD123

Manufacturer Part	IRFD123
Manufacturer	Harris Corporation
Description	MOSFET N-CH 100V 1.3A 4DIP
Category	Discrete Semiconductor Products
RoHS	Lead free / RoHS Compliant
Warranty	365 days
Datasheet	-

Type	Description
Product Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	16 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	360 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Through Hole
Supplier Device Package:	4-HVMDIP
Package / Case:	4-DIP (0.300", 7.62mm)

We provide 90 days warranty;
The Pre-Shipment Inspection (PSI) will be applied;
If some of the items you received aren't of perfect quality, we would responsibly arrange your refund or replacement. But the items must remain their original condition;
If you don't receive the item in 25 days, just let us know, a new package or replacement will be issued.
If your item is significantly different from our product description, you can A: Return it and get a full refund, or B: Get a partial refund and keep the item.
Taxes & VAT will not be included;